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| Ordering number : ENN7918 MCH6626 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications Features * Package Dimensions unit : mm 2173A [MCH6626] 0.25 0.3 4 5 6 0.15 * * The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 2.5V drive. 2.1 1.6 32 0.65 2.0 (Bottom view) 0.25 0.07 1 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 0.85 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions 1 2 3 (Top view) N-channel 20 10 1.6 6.4 0.8 150 P-channel -20 10 --1.0 --4.0 Unit V V A A W C C --55 to +150 Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.8A ID=0.8A, VGS=4V ID=0.4A, VGS=2.5V ID=0.1A, VGS=1.8V 20 1 10 0.4 1.4 2.4 180 220 300 230 310 450 1.3 V A A V S m m m Symbol Conditions Ratings min typ max Unit Marking : WA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 93004 TS IM TA-100982 No.7918-1/6 MCH6626 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--500mA ID=-500mA, VGS=--4V ID=-300mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=--4V, ID=--1A VDS=-10V, VGS=--4V, ID=--1A VDS=-10V, VGS=--4V, ID=--1A IS=--1A, VGS=0 --0.4 0.7 1.2 380 540 115 23 15 8 6 15 7 1.5 0.4 0.3 --0.9 --1.5 500 760 --20 --1 10 --1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=1.6A VDS=10V, VGS=4V, ID=1.6A VDS=10V, VGS=4V, ID=1.6A IS=1.6A, VGS=0 Ratings min typ 105 23 15 6 16 19 8 1.4 0.3 0.3 0.92 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Electrical Connection 6 5 4 1 2 3 Top view 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Switching Time Test Circuit [N-channel] VIN 4V 0V VIN ID=800mA RL=12.5 VOUT VDD=10V [P-channel] VIN 0V --4V VIN ID= --500mA RL=20 VOUT VDD= --10V D PW=10s D.C.1% D PW=10s D.C.1% G MCH6626 P.G 50 G MCH6626 P.G 50 S S No.7918-2/6 MCH6626 2.0 ID -- VDS 2.5 V [Nch] V --1.0 --0.9 ID -- VDS V --2 .5V [Pch] --4. 0 3.0V Drain Current, ID -- A 4.0V 1.6 Drain Current, ID -- A 1. 8V --0.8 --3 .0 6.0V 1.5 V --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 . --2 0V 1.2 10.0 0.8 V VGS= --1.5V 0.4 VGS=1.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 --0.1 0 0 Drain-to-Source Voltage, VDS -- V 2.0 IT02916 ID -- VGS [Nch] --2 5C Ta = 1.0 Ta= 1.6 --1.6 Drain Current, ID -- A Drain Current, ID -- A 1.4 1.2 1.0 0.8 --1.4 --1.2 --1.0 --0.8 5C --25 C 0.4 0.2 0 0 0.2 0.4 0.6 0.8 25 C --0.2 0 1.4 1.6 1.8 2.0 0 0.5 Ta = --0.4 25 75 C C --25 C 0.6 --0.6 Ta= 7 1.0 1.2 1.5 2.0 25 C 2.5 75 1.8 --1.8 C 3.0 IT03369 VDS=10V --2 5C 25 7 C 5 C --2.0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V IT03368 ID -- VGS [Pch] VDS= --10V Gate-to-Source Voltage, VGS -- V 400 IT02917 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 1000 [Nch] Ta=25C RDS(on) -- VGS [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 ID=0.4A 300 250 200 150 100 50 0 0 2 0.8A Static Drain-to-Source On-State Resistance, RDS(on) -- m 900 800 700 600 500 400 300 200 100 0 0 ID= --0.3A --0.5A 4 6 8 10 IT03305 Gate-to-Source Voltage, VGS -- V 400 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 IT03370 RDS(on) -- Ta [Nch] 1000 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 200 150 100 50 0 --60 Static Drain-to-Source On-State Resistance, RDS(on) -- m 900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 V =2.5 , VGS 0.4A 4.0V I D= S= A, VG .8 I D=0 A, VG --0.3 I D= --2 S= .5V 0.5A I D= -- = --4.0 , V GS V --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT03306 Ambient Temperature, Ta -- C IT03371 No.7918-3/6 MCH6626 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 yfs -- ID [Nch] Forward Transfer Admittance, yfs -- S 3 2 yfs -- ID [Pch] VDS= --10V Forward Transfer Admittance, yfs -- S VDS=10V 25 C 1.0 7 5 C 25 = Ta --2 C 5 7 C 5 Ta= C --25 C 75 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.3 0.4 IT02920 IF -- VSD Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 7 --1.0 IT03372 [Nch] VGS=0 IF -- VSD [Pch] VGS=0 Forward Current, IF -- A 5C Forward Current, IF -- A C --25 C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 --0.01 --0.2 --0.3 --0.4 --0.5 Ta= 75 Ta= 7 25 --0.6 --0.7 --25C --0.8 --0.9 25C C --1.0 --1.1 --1.2 Diode Forward Voltage, VSD -- V 100 7 IT02921 SW Time -- ID Diode Forward Voltage, VSD -- V 3 2 IT03373 [Nch] SW Time -- ID [Pch] Switching Time, SW Time -- ns Switching Time, SW Time -- ns 5 3 2 VDD=10V VGS=4V VDD= --10V VGS= --4V 100 7 5 td(off) tr 10 7 5 3 2 tf td(on) 2 10 7 5 3 2 1.0 td(off) td(on) tf 1.0 0.1 2 3 5 7 1.0 2 3 5 IT02922 --0.1 3 2 2 1000 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A [Nch] f=1MHz Ciss, Coss, Crss -- VDS 3 5 7 --1.0 Drain Current, ID -- A tr 3 2 3 IT03374 [Pch] f=1MHz Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 2 Ciss 100 7 5 100 7 5 3 2 Ciss 3 2 Coss Coss Crss 10 0 2 4 6 8 10 12 14 16 18 20 0 --2 --4 --6 --8 Crss 10 --10 --12 --14 --16 --18 --20 Drain-to-Source Voltage, VDS -- V IT02923 Drain-to-Source Voltage, VDS -- V IT03375 No.7918-4/6 MCH6626 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS -- Qg Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.6A --4.0 VDS= --10V --3.5 ID= --1A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 VGS -- Qg Gate-to-Source Voltage, VGS -- V 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC 10 7 5 3 2 IT03307 Total Gate Charge, Qg -- nC --10 7 5 3 2 IT03376 ASO IDP=6.4A <10s 10 1m 0s s Drain Current, ID -- A 10 ms ASO IDP= --4.0A <10s 1m s Drain Current, ID -- A ID=1.6A 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 0m --1.0 7 5 3 2 ID= --1.0A 10 ms op s era DC Operation in this area is limited by RDS(on). 10 tio n op 0m s era tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 IT03308 Drain-to-Source Voltage, VDS -- V [Pch, Nch] PD -- Ta --0.1 7 5 3 2 0.01 0.1 Ta=25C Single pulse 2 --0.01 Mounted on a ceramic board(900mm !0.8mm)1unit --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V IT03377 1.0 Allowable Power Dissipation, PD -- W 0.8 M ou nt ed 0.6 on ac er am ic bo 0.4 ar d( 90 0m 0.2 m2 !0 .8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Tamperature, Ta -- C IT02521 No.7918-5/6 MCH6626 Note on usage : Since the MCH6626 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2004. Specifications and information herein are subject to change without notice. PS No.7918-6/6 |
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